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Samsung has revealed that it’s now mass
producing memory modules with the largest
capacity and the highest energy efficiency
of any and all DRAM modules to date. These
modules are primarily aiming at enterprise
server and data center applications, but the
firm is expected to address consumer
products based on the same technology
somewhere down the line.


At 128GB the new DDR4 sticks have been
manufactured utilizing the through silicon via
(TSV) interconnect technique. As opposed
to traditional wire bonding, with TSV the
chips are ground down to a few dozen
micrometers possessing hundreds of tiny
holes that enable vertical electrical
connections to pass through the chips. The
TSV technique isn’t new, but it’s more
advanced and allows for a significant boost
in signal transmission.

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The unit is comprised of 36 4GB DRAM
packages divided on two sides, with each
package containing four 20nm 8Gb chips. In
total it’s comprised of 144 DDR4 chips. Each
package embeds the data buffer function,
and according to Samsung this optimizes
module performance and power
consumption.

The hardware almost doubles performance
at 2,400Mbps and halves the power usage in
comparison to the previous highest capacity
DRAM modules, 64GB LRDIMMS. It’s clear
that where wired bonding limited
performance, TSV opens things up for a
great performance boost.

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While it might take a few years before you
see this type of memory speed in one of
your everyday devices, it’s exciting to think
about just what might be possible with
equally powerful hardware when it hits the
market.


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